Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD

The AlInN layers have been grown with different growth parameters on GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as pressure and temperature on the Al incorporation during AlInN material growth have been investigated. The results...

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Main Authors:	Wei-Ching Huang, Edward-Yi Chang, Yuen-Yee Wong, Kung-Liang Lin, Yu-Lin Hsiao, Chang, Fu Dee, Burhanuddin Yeop Majlis
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2013
Online Access:	http://journalarticle.ukm.my/5911/ http://journalarticle.ukm.my/5911/ http://journalarticle.ukm.my/5911/1/19%2520Wei-Ching%2520Huang.pdf

id	ukm-5911
recordtype	eprints
spelling	ukm-59112016-12-14T06:39:50Z http://journalarticle.ukm.my/5911/ Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD Wei-Ching Huang, Edward-Yi Chang, Yuen-Yee Wong, Kung-Liang Lin, Yu-Lin Hsiao, Chang, Fu Dee Burhanuddin Yeop Majlis, The AlInN layers have been grown with different growth parameters on GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as pressure and temperature on the Al incorporation during AlInN material growth have been investigated. The results showed that lower pressure provides a tendency for higher Al incorporating in the AlInN layer. Besides, as the temperature was increased from 700°C to 780°C, an estimation of 4% reduction on the indium composition has been observed for each 20°C increment. XRD analysis showed that the best crystal quality of AlInN occured at 80% Al composition because of the higher lattice matching with GaN. Based on the above criteria, an Al0.8In0.2N/GaN HEMT device with 2 μm gate length has also been fabricated. The DC characteristics showed a saturated current, Idss of 280 mA/mm and transconductance of 140 mS/mm. Universiti Kebangsaan Malaysia 2013-02 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/5911/1/19%2520Wei-Ching%2520Huang.pdf Wei-Ching Huang, and Edward-Yi Chang, and Yuen-Yee Wong, and Kung-Liang Lin, and Yu-Lin Hsiao, and Chang, Fu Dee and Burhanuddin Yeop Majlis, (2013) Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD. Sains Malaysiana, 42 (2). pp. 247-250. ISSN 0126-6039 http://www.ukm.my/jsm/
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	The AlInN layers have been grown with different growth parameters on GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as pressure and temperature on the Al incorporation during AlInN material growth have been investigated. The results showed that lower pressure provides a tendency for higher Al incorporating in the AlInN layer. Besides, as the temperature was increased from 700°C to 780°C, an estimation of 4% reduction on the indium composition has been observed for each 20°C increment. XRD analysis showed that the best crystal quality of AlInN occured at 80% Al composition because of the higher lattice matching with GaN. Based on the above criteria, an Al0.8In0.2N/GaN HEMT device with 2 μm gate length has also been fabricated. The DC characteristics showed a saturated current, Idss of 280 mA/mm and transconductance of 140 mS/mm.
format	Article
author	Wei-Ching Huang, Edward-Yi Chang, Yuen-Yee Wong, Kung-Liang Lin, Yu-Lin Hsiao, Chang, Fu Dee Burhanuddin Yeop Majlis,
spellingShingle	Wei-Ching Huang, Edward-Yi Chang, Yuen-Yee Wong, Kung-Liang Lin, Yu-Lin Hsiao, Chang, Fu Dee Burhanuddin Yeop Majlis, Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
author_facet	Wei-Ching Huang, Edward-Yi Chang, Yuen-Yee Wong, Kung-Liang Lin, Yu-Lin Hsiao, Chang, Fu Dee Burhanuddin Yeop Majlis,
author_sort	Wei-Ching Huang,
title	Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
title_short	Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
title_full	Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
title_fullStr	Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
title_full_unstemmed	Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
title_sort	characterization of alinn layer grown on gan/sapphire substrate by mocvd
publisher	Universiti Kebangsaan Malaysia
publishDate	2013
url	http://journalarticle.ukm.my/5911/ http://journalarticle.ukm.my/5911/ http://journalarticle.ukm.my/5911/1/19%2520Wei-Ching%2520Huang.pdf
first_indexed	2023-09-18T19:45:30Z
last_indexed	2023-09-18T19:45:30Z
_version_	1777405872220143616

Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD

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