Nanoscale patterning by AFM lithography and its application on the fabrication of silicon nanowire devices

Many techniques have been applied to fabricate nanostructures via top-down approach such as electron beam lithography. However, most of the techniques are very complicated and involves many process steps, high cost operation as well as the use of hazardous chemicals. Meanwhile, atomic force microsco...

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Main Authors:	Sabar D. Hutagalung, Kam, Chung Lew, Darsono, Teguh
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2014
Online Access:	http://journalarticle.ukm.my/6857/ http://journalarticle.ukm.my/6857/ http://journalarticle.ukm.my/6857/1/15_Sabar_D._Hutagalung.pdf

id	ukm-6857
recordtype	eprints
spelling	ukm-68572016-12-14T06:42:23Z http://journalarticle.ukm.my/6857/ Nanoscale patterning by AFM lithography and its application on the fabrication of silicon nanowire devices Sabar D. Hutagalung, Kam, Chung Lew Darsono, Teguh Many techniques have been applied to fabricate nanostructures via top-down approach such as electron beam lithography. However, most of the techniques are very complicated and involves many process steps, high cost operation as well as the use of hazardous chemicals. Meanwhile, atomic force microscopy (AFM) lithography is a simple technique which is considered maskless and involves only an average cost and less complexity. In AFM lithography, the movement of a probe tip can be controlled to create nanoscale patterns on sample surface. For silicon nanowire (SiNW) fabrication, a conductive tip was operated in non-contact AFM mode to grow nanoscale oxide patterns on silicon-on-insulator (SOI) wafer surface based on local anodic oxidation (LAO) mechanism. The patterned structure was etched through two steps of wet etching processes. First, the TMAH was used as the etchant solution for Si removing. In the second step, diluted HF was used to remove oxide mask in order to produce a completed SiNW based devices. A SiNW based device which is formed by a nanowire channel, source and drain pads with lateral gate structures can be fabricated by well controlling the lithography process (applied tip voltage and writing speed) as well as the etching processes. Universiti Kebangsaan Malaysia 2014-02 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/6857/1/15_Sabar_D._Hutagalung.pdf Sabar D. Hutagalung, and Kam, Chung Lew and Darsono, Teguh (2014) Nanoscale patterning by AFM lithography and its application on the fabrication of silicon nanowire devices. Sains Malaysiana, 43 (2). pp. 267-272. ISSN 0126-6039 http://www.ukm.my/jsm
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	Many techniques have been applied to fabricate nanostructures via top-down approach such as electron beam lithography. However, most of the techniques are very complicated and involves many process steps, high cost operation as well as the use of hazardous chemicals. Meanwhile, atomic force microscopy (AFM) lithography is a simple technique which is considered maskless and involves only an average cost and less complexity. In AFM lithography, the movement of a probe tip can be controlled to create nanoscale patterns on sample surface. For silicon nanowire (SiNW) fabrication, a conductive tip was operated in non-contact AFM mode to grow nanoscale oxide patterns on silicon-on-insulator (SOI) wafer surface based on local anodic oxidation (LAO) mechanism. The patterned structure was etched through two steps of wet etching processes. First, the TMAH was used as the etchant solution for Si removing. In the second step, diluted HF was used to remove oxide mask in order to produce a completed SiNW based devices. A SiNW based device which is formed by a nanowire channel, source and drain pads with lateral gate structures can be fabricated by well controlling the lithography process (applied tip voltage and writing speed) as well as the etching processes.
format	Article
author	Sabar D. Hutagalung, Kam, Chung Lew Darsono, Teguh
spellingShingle	Sabar D. Hutagalung, Kam, Chung Lew Darsono, Teguh Nanoscale patterning by AFM lithography and its application on the fabrication of silicon nanowire devices
author_facet	Sabar D. Hutagalung, Kam, Chung Lew Darsono, Teguh
author_sort	Sabar D. Hutagalung,
title	Nanoscale patterning by AFM lithography and its application on the fabrication of silicon nanowire devices
title_short	Nanoscale patterning by AFM lithography and its application on the fabrication of silicon nanowire devices
title_full	Nanoscale patterning by AFM lithography and its application on the fabrication of silicon nanowire devices
title_fullStr	Nanoscale patterning by AFM lithography and its application on the fabrication of silicon nanowire devices
title_full_unstemmed	Nanoscale patterning by AFM lithography and its application on the fabrication of silicon nanowire devices
title_sort	nanoscale patterning by afm lithography and its application on the fabrication of silicon nanowire devices
publisher	Universiti Kebangsaan Malaysia
publishDate	2014
url	http://journalarticle.ukm.my/6857/ http://journalarticle.ukm.my/6857/ http://journalarticle.ukm.my/6857/1/15_Sabar_D._Hutagalung.pdf
first_indexed	2023-09-18T19:48:03Z
last_indexed	2023-09-18T19:48:03Z
_version_	1777406033221648384

Nanoscale patterning by AFM lithography and its application on the fabrication of silicon nanowire devices

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