An analysis of the electron trajectory in the vicinity of GaAs quantum dot
Quantum dots being an interesting class of nanostructures are considered potential prototype systems for novel nano-devices such as single electron transistor (SET). Here in this research, we present an analysis of the electron trajectory in the vicinity of gallium arsenide (GaAs) quantum dot. To pe...
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Universiti Kebangsaan Malaysia
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ukm-71692016-12-14T06:43:17Z http://journalarticle.ukm.my/7169/ An analysis of the electron trajectory in the vicinity of GaAs quantum dot Hanafi Ithnin, M., Khalid Kasmin A., Radzi Mat Isa A., Shaari R., Ahmed Quantum dots being an interesting class of nanostructures are considered potential prototype systems for novel nano-devices such as single electron transistor (SET). Here in this research, we present an analysis of the electron trajectory in the vicinity of gallium arsenide (GaAs) quantum dot. To perform this study, DFT based methodology is employed to optimize structure of quantum dot and determining the electrostatic potential around the dot. Under the influence of obtained electrostatic potential, trajectory of the moving electron towards the dot is investigated. The results showed that GaAs quantum dot have negative and positive potential surfaces that influence the electron interaction with the dot. These results motivate the development of SET electrode channel where the electron moves towards the dot on the surface with positive potential rather than negative potential surface. Universiti Kebangsaan Malaysia 2014-06 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/7169/1/02_Hanafi_Ithnin.pdf Hanafi Ithnin, and M., Khalid Kasmin and A., Radzi Mat Isa and A., Shaari and R., Ahmed (2014) An analysis of the electron trajectory in the vicinity of GaAs quantum dot. Sains Malaysiana, 43 (6). pp. 819-825. ISSN 0126-6039 http://www.ukm.my/jsm/ |
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Universiti Kebangasaan Malaysia |
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UKM Institutional Repository |
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Online Access |
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English |
description |
Quantum dots being an interesting class of nanostructures are considered potential prototype systems for novel nano-devices such as single electron transistor (SET). Here in this research, we present an analysis of the electron trajectory in the vicinity of gallium arsenide (GaAs) quantum dot. To perform this study, DFT based methodology is employed to optimize structure of quantum dot and determining the electrostatic potential around the dot. Under the influence of obtained electrostatic potential, trajectory of the moving electron towards the dot is investigated. The results showed that GaAs quantum dot have negative and positive potential surfaces that influence the electron interaction with the dot. These results motivate the development of SET electrode channel where the electron moves towards the dot on the surface with positive potential rather than negative potential surface. |
format |
Article |
author |
Hanafi Ithnin, M., Khalid Kasmin A., Radzi Mat Isa A., Shaari R., Ahmed |
spellingShingle |
Hanafi Ithnin, M., Khalid Kasmin A., Radzi Mat Isa A., Shaari R., Ahmed An analysis of the electron trajectory in the vicinity of GaAs quantum dot |
author_facet |
Hanafi Ithnin, M., Khalid Kasmin A., Radzi Mat Isa A., Shaari R., Ahmed |
author_sort |
Hanafi Ithnin, |
title |
An analysis of the electron trajectory in the vicinity of GaAs quantum dot |
title_short |
An analysis of the electron trajectory in the vicinity of GaAs quantum dot |
title_full |
An analysis of the electron trajectory in the vicinity of GaAs quantum dot |
title_fullStr |
An analysis of the electron trajectory in the vicinity of GaAs quantum dot |
title_full_unstemmed |
An analysis of the electron trajectory in the vicinity of GaAs quantum dot |
title_sort |
analysis of the electron trajectory in the vicinity of gaas quantum dot |
publisher |
Universiti Kebangsaan Malaysia |
publishDate |
2014 |
url |
http://journalarticle.ukm.my/7169/ http://journalarticle.ukm.my/7169/ http://journalarticle.ukm.my/7169/1/02_Hanafi_Ithnin.pdf |
first_indexed |
2023-09-18T19:48:56Z |
last_indexed |
2023-09-18T19:48:56Z |
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1777406088266645504 |