Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell

Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell

This paper represents the impact of nanowires ratio of silicon nanowire transistors on the characteristics of 6-transistors SRAM cell. This study is the first to demonstrate nanowires ratio optimization of Nano-scale SiNWT Based SRAM Cell. Noise margins and inflection voltage of transfer character...

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Main Authors: Naif, Yasir Hasyim, Alsibai, Mohammad Hayyan, Abdul Manap, Sulastri
Format: Article
Language:English
Published: EDP Sciences, 2015 2015
Subjects:
Not Available
Online Access:http://umpir.ump.edu.my/id/eprint/11600/
http://umpir.ump.edu.my/id/eprint/11600/
http://umpir.ump.edu.my/id/eprint/11600/
http://umpir.ump.edu.my/id/eprint/11600/1/matecconf_iceim2015_01009.pdf
id ump-11600
recordtype eprints
spelling ump-116002018-02-02T07:15:02Z http://umpir.ump.edu.my/id/eprint/11600/ Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell Naif, Yasir Hasyim Alsibai, Mohammad Hayyan Abdul Manap, Sulastri Not Available This paper represents the impact of nanowires ratio of silicon nanowire transistors on the characteristics of 6-transistors SRAM cell. This study is the first to demonstrate nanowires ratio optimization of Nano-scale SiNWT Based SRAM Cell. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on both nanowires ratio and digital voltage level (Vdd). And increasing of logic voltage level from 1V to 3V tends to decreasing in optimization ratio but with increasing in current and power. SRAM using nanowires transistors must use logic level (2V or 2.5V) to produce SRAM with lower dimensions and lower inflection currents and then with lower power consumption. EDP Sciences, 2015 2015 Article PeerReviewed application/pdf en cc_by http://umpir.ump.edu.my/id/eprint/11600/1/matecconf_iceim2015_01009.pdf Naif, Yasir Hasyim and Alsibai, Mohammad Hayyan and Abdul Manap, Sulastri (2015) Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell. MATEC Web of Conferences, 27. pp. 1-5. ISSN 2261-236X http://dx.doi.org/10.1051/matecconf/20152701009 10.1051/matecconf/20152701009
repository_type Digital Repository
institution_category Local University
institution Universiti Malaysia Pahang
building UMP Institutional Repository
collection Online Access
language English
topic Not Available
spellingShingle Not Available
Naif, Yasir Hasyim
Alsibai, Mohammad Hayyan
Abdul Manap, Sulastri
Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell
description This paper represents the impact of nanowires ratio of silicon nanowire transistors on the characteristics of 6-transistors SRAM cell. This study is the first to demonstrate nanowires ratio optimization of Nano-scale SiNWT Based SRAM Cell. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on both nanowires ratio and digital voltage level (Vdd). And increasing of logic voltage level from 1V to 3V tends to decreasing in optimization ratio but with increasing in current and power. SRAM using nanowires transistors must use logic level (2V or 2.5V) to produce SRAM with lower dimensions and lower inflection currents and then with lower power consumption.
format Article
author Naif, Yasir Hasyim
Alsibai, Mohammad Hayyan
Abdul Manap, Sulastri
author_facet Naif, Yasir Hasyim
Alsibai, Mohammad Hayyan
Abdul Manap, Sulastri
author_sort Naif, Yasir Hasyim
title Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell
title_short Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell
title_full Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell
title_fullStr Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell
title_full_unstemmed Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell
title_sort optimization of nanowires ratio in nano-scale sinwt based sram cell
publisher EDP Sciences, 2015
publishDate 2015
url http://umpir.ump.edu.my/id/eprint/11600/
http://umpir.ump.edu.my/id/eprint/11600/
http://umpir.ump.edu.my/id/eprint/11600/
http://umpir.ump.edu.my/id/eprint/11600/1/matecconf_iceim2015_01009.pdf
first_indexed 2023-09-18T22:12:31Z
last_indexed 2023-09-18T22:12:31Z
_version_ 1777415122424168448

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