Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films

Copper(I) iodide (CuI) has received considerable scrutiny as a hole transport material in solid-state dye-sensitized solar cells (ss-DSSC), amidst challenging issues such as rapid crystallization, pore filing, and dye desorption. This paper would attempt to study the influence of heat on various pr...

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Main Authors:	Zulkifly, Aziz, Ayib Rosdi, Zainun, Saifful Kamaluddin, Muzakir
Format:	Conference or Workshop Item
Language:	English
Published:	Universiti Malaysia Pahang 2016
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/15911/ http://umpir.ump.edu.my/id/eprint/15911/ http://umpir.ump.edu.my/id/eprint/15911/1/P031%20pg206-211.pdf

id	ump-15911
recordtype	eprints
spelling	ump-159112018-10-31T07:03:02Z http://umpir.ump.edu.my/id/eprint/15911/ Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films Zulkifly, Aziz Ayib Rosdi, Zainun Saifful Kamaluddin, Muzakir TK Electrical engineering. Electronics Nuclear engineering Copper(I) iodide (CuI) has received considerable scrutiny as a hole transport material in solid-state dye-sensitized solar cells (ss-DSSC), amidst challenging issues such as rapid crystallization, pore filing, and dye desorption. This paper would attempt to study the influence of heat on various properties of CuI thin film in the presence of chelating agent tetramethylethylenediamine (TMEDA) in the CuI precursor solution at fixed CuI:TMEDA molar ratio of 1:1. Although heat did not seem to alter the morphology of the thin film, slight broadening was observed in the diffractogram peaks which suggested reduction in particle size. Photoluminescence (PL) spectra for all the samples which were annealed below 80 ⁰C were red shifted which suggested than some of the absorbed energy has been lost most likely due to non-radiative emission usually caused by deep space traps. In other word, this finding also suggest that an optimum heating temperature would mend the material’s internal structure leading to fewer formation of deep space traps normally associated with the presence of internal stress in the material. At an optimum annealing temperature of 80 ⁰C, thin film resistivity fell from 6.2 Ω.cm to 4.7 Ω.cm and achieved a remarkable conductivity of 165 S/cm2. These remarkable findings seems to be in accord with our argument that CuITMEDA complex could find its application as a hole transport material (HTM) in ss-DSSC Universiti Malaysia Pahang 2016 Conference or Workshop Item PeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/15911/1/P031%20pg206-211.pdf Zulkifly, Aziz and Ayib Rosdi, Zainun and Saifful Kamaluddin, Muzakir (2016) Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films. In: Proceedings of The National Conference for Postgraduate Research (NCON-PGR 2016), 24-25 September 2016 , Universiti Malaysia Pahang (UMP), Pekan, Pahang. pp. 206-211.. http://ee.ump.edu.my/ncon/wp-content/uploads/2016/10/Proceeding-NCON-PGR-2016.zip
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Zulkifly, Aziz Ayib Rosdi, Zainun Saifful Kamaluddin, Muzakir Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
description	Copper(I) iodide (CuI) has received considerable scrutiny as a hole transport material in solid-state dye-sensitized solar cells (ss-DSSC), amidst challenging issues such as rapid crystallization, pore filing, and dye desorption. This paper would attempt to study the influence of heat on various properties of CuI thin film in the presence of chelating agent tetramethylethylenediamine (TMEDA) in the CuI precursor solution at fixed CuI:TMEDA molar ratio of 1:1. Although heat did not seem to alter the morphology of the thin film, slight broadening was observed in the diffractogram peaks which suggested reduction in particle size. Photoluminescence (PL) spectra for all the samples which were annealed below 80 ⁰C were red shifted which suggested than some of the absorbed energy has been lost most likely due to non-radiative emission usually caused by deep space traps. In other word, this finding also suggest that an optimum heating temperature would mend the material’s internal structure leading to fewer formation of deep space traps normally associated with the presence of internal stress in the material. At an optimum annealing temperature of 80 ⁰C, thin film resistivity fell from 6.2 Ω.cm to 4.7 Ω.cm and achieved a remarkable conductivity of 165 S/cm2. These remarkable findings seems to be in accord with our argument that CuITMEDA complex could find its application as a hole transport material (HTM) in ss-DSSC
format	Conference or Workshop Item
author	Zulkifly, Aziz Ayib Rosdi, Zainun Saifful Kamaluddin, Muzakir
author_facet	Zulkifly, Aziz Ayib Rosdi, Zainun Saifful Kamaluddin, Muzakir
author_sort	Zulkifly, Aziz
title	Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
title_short	Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
title_full	Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
title_fullStr	Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
title_full_unstemmed	Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
title_sort	influence of annealing temperatures on properties in chelate based cui thin films
publisher	Universiti Malaysia Pahang
publishDate	2016
url	http://umpir.ump.edu.my/id/eprint/15911/ http://umpir.ump.edu.my/id/eprint/15911/ http://umpir.ump.edu.my/id/eprint/15911/1/P031%20pg206-211.pdf
first_indexed	2023-09-18T22:21:06Z
last_indexed	2023-09-18T22:21:06Z
_version_	1777415662544617472

Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films

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