Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor

Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor

This study explores optimization of resistance load (R-Load) of four silicon nanowire transistor (SiNWT)-based static random-access memory (SRAM) cell. Noise margins and inflection voltage of butterfly characteristics with static power consumption of SRAM cell are used as limiting factors in this op...

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Main Author: Hashim, Yasir
Format: Article
Language:English
English
Published: American Scientific Publishers 2018
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/19249/
http://umpir.ump.edu.my/id/eprint/19249/
http://umpir.ump.edu.my/id/eprint/19249/
http://umpir.ump.edu.my/id/eprint/19249/1/17JNN-13956.pdf
http://umpir.ump.edu.my/id/eprint/19249/7/ftech-2018-yasir.pdf
id ump-19249
recordtype eprints
spelling ump-192492018-03-07T07:05:33Z http://umpir.ump.edu.my/id/eprint/19249/ Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor Hashim, Yasir TK Electrical engineering. Electronics Nuclear engineering This study explores optimization of resistance load (R-Load) of four silicon nanowire transistor (SiNWT)-based static random-access memory (SRAM) cell. Noise margins and inflection voltage of butterfly characteristics with static power consumption of SRAM cell are used as limiting factors in this optimization. Range of R-Load used in this study was 20–1000 KΩ with V dd= 1 V. Results indicate that optimization depends critically on resistance load value. The optimized range of R-Load is 100–200 KΩ. American Scientific Publishers 2018-02 Article PeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/19249/1/17JNN-13956.pdf application/pdf en http://umpir.ump.edu.my/id/eprint/19249/7/ftech-2018-yasir.pdf Hashim, Yasir (2018) Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor. Journal of Nanoscience and Nanotechnology, 18 (2). pp. 1199-1201. ISSN 1533-4880 (Print); 1533-4899 (Online) https://doi.org/10.1166/jnn.2018.13956 https://doi.org/10.1166/jnn.2018.13956
repository_type Digital Repository
institution_category Local University
institution Universiti Malaysia Pahang
building UMP Institutional Repository
collection Online Access
language English
English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Hashim, Yasir
Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor
description This study explores optimization of resistance load (R-Load) of four silicon nanowire transistor (SiNWT)-based static random-access memory (SRAM) cell. Noise margins and inflection voltage of butterfly characteristics with static power consumption of SRAM cell are used as limiting factors in this optimization. Range of R-Load used in this study was 20–1000 KΩ with V dd= 1 V. Results indicate that optimization depends critically on resistance load value. The optimized range of R-Load is 100–200 KΩ.
format Article
author Hashim, Yasir
author_facet Hashim, Yasir
author_sort Hashim, Yasir
title Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor
title_short Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor
title_full Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor
title_fullStr Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor
title_full_unstemmed Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor
title_sort optimization of resistance load in 4t-static random-access memory cell based on silicon nanowire transistor
publisher American Scientific Publishers
publishDate 2018
url http://umpir.ump.edu.my/id/eprint/19249/
http://umpir.ump.edu.my/id/eprint/19249/
http://umpir.ump.edu.my/id/eprint/19249/
http://umpir.ump.edu.my/id/eprint/19249/1/17JNN-13956.pdf
http://umpir.ump.edu.my/id/eprint/19249/7/ftech-2018-yasir.pdf
first_indexed 2023-09-18T22:27:35Z
last_indexed 2023-09-18T22:27:35Z
_version_ 1777416070467944448

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