Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type

This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simu...

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Main Author:	Hashim, Yasir
Format:	Conference or Workshop Item
Language:	English
Published:	IOP Publishing 2017
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/19252/ http://umpir.ump.edu.my/id/eprint/19252/ http://umpir.ump.edu.my/id/eprint/19252/ http://umpir.ump.edu.my/id/eprint/19252/1/Hashim_2017_IOP_Conf._Ser.%253A_Mater._Sci._Eng._226_012123.pdf

id	ump-19252
recordtype	eprints
spelling	ump-192522017-12-07T02:31:02Z http://umpir.ump.edu.my/id/eprint/19252/ Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type Hashim, Yasir TK Electrical engineering. Electronics Nuclear engineering This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nanosensor is with GaAs because it has the greatest ∆I (=10.9%) referring to ∆I at 25o C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest ∆I (=6%) referring to ∆I at 25 C. IOP Publishing 2017 Conference or Workshop Item PeerReviewed application/pdf en cc_by http://umpir.ump.edu.my/id/eprint/19252/1/Hashim_2017_IOP_Conf._Ser.%253A_Mater._Sci._Eng._226_012123.pdf Hashim, Yasir (2017) Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type. In: IOP Conference Series: Materials Science and Engineering, International Research and Innovation Summit (IRIS2017), 6-7 May 2017 , Melaka, Malaysia. pp. 1-6., 226 (012123). ISSN 1757-899X http://dx.doi.org/10.1088/1757-899X/226/1/012123 10.1088/1757-899X/226/1/012123
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Hashim, Yasir Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
description	This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nanosensor is with GaAs because it has the greatest ∆I (=10.9%) referring to ∆I at 25o C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest ∆I (=6%) referring to ∆I at 25 C.
format	Conference or Workshop Item
author	Hashim, Yasir
author_facet	Hashim, Yasir
author_sort	Hashim, Yasir
title	Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
title_short	Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
title_full	Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
title_fullStr	Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
title_full_unstemmed	Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
title_sort	investigation of finfet as a temperature nano-sensor based on channel semiconductor type
publisher	IOP Publishing
publishDate	2017
url	http://umpir.ump.edu.my/id/eprint/19252/ http://umpir.ump.edu.my/id/eprint/19252/ http://umpir.ump.edu.my/id/eprint/19252/ http://umpir.ump.edu.my/id/eprint/19252/1/Hashim_2017_IOP_Conf._Ser.%253A_Mater._Sci._Eng._226_012123.pdf
first_indexed	2023-09-18T22:27:36Z
last_indexed	2023-09-18T22:27:36Z
_version_	1777416070898909184

Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type

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