Carbon nanotube field effect transistors: toward future nanoscale electronics

As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are effectively being examined in order to keep the scaling trend. Among these, carbon nanotubes (CNTs) have emerged as one of the most extensively studied materials due to their excellent performance properti...

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Main Authors:	Obite, Felix, Ijeomah, Geoffrey, Bassi, Joseph Stephen
Format:	Article
Language:	English
Published:	Taylor & Francis 2018
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/20372/ http://umpir.ump.edu.my/id/eprint/20372/ http://umpir.ump.edu.my/id/eprint/20372/ http://umpir.ump.edu.my/id/eprint/20372/13/Carbon%20nanotube%20field%20effect%20transistors.pdf

id	ump-20372
recordtype	eprints
spelling	ump-203722019-02-18T04:15:48Z http://umpir.ump.edu.my/id/eprint/20372/ Carbon nanotube field effect transistors: toward future nanoscale electronics Obite, Felix Ijeomah, Geoffrey Bassi, Joseph Stephen TK Electrical engineering. Electronics Nuclear engineering As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are effectively being examined in order to keep the scaling trend. Among these, carbon nanotubes (CNTs) have emerged as one of the most extensively studied materials due to their excellent performance properties such as minimal short channel effects, high mobility, and high normalized drive currents. CNTs are the backbone of carbon nanotube field effect transistor, which is considered as the most preferred candidate for the replacement of silicon transistors. Despite their practical significance, a well-organized framework, and consistent review are still lacking. To this end, this paper presents an intensive review in order to define the state of the art in this field from a fresh and unifying viewpoint while elucidating fruitful insights into recent advances and future trends. In particular, we review material properties and structures. Specifically, we emphasize on the most relevant device fabrication and current modeling concepts. Furthermore, we distill key insights into recent advances and challenges that may sustain or expand future applications. The future research directions are also carefully analyzed. Taylor & Francis 2018 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/20372/13/Carbon%20nanotube%20field%20effect%20transistors.pdf Obite, Felix and Ijeomah, Geoffrey and Bassi, Joseph Stephen (2018) Carbon nanotube field effect transistors: toward future nanoscale electronics. International Journal of Computers and Applications, 41 (2). pp. 149-164. ISSN 206-212X (Print); 1925-7074 (Online) https://doi.org/10.1080/1206212X.2017.1415111 https://doi.org/10.1080/1206212X.2017.1415111
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Obite, Felix Ijeomah, Geoffrey Bassi, Joseph Stephen Carbon nanotube field effect transistors: toward future nanoscale electronics
description	As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are effectively being examined in order to keep the scaling trend. Among these, carbon nanotubes (CNTs) have emerged as one of the most extensively studied materials due to their excellent performance properties such as minimal short channel effects, high mobility, and high normalized drive currents. CNTs are the backbone of carbon nanotube field effect transistor, which is considered as the most preferred candidate for the replacement of silicon transistors. Despite their practical significance, a well-organized framework, and consistent review are still lacking. To this end, this paper presents an intensive review in order to define the state of the art in this field from a fresh and unifying viewpoint while elucidating fruitful insights into recent advances and future trends. In particular, we review material properties and structures. Specifically, we emphasize on the most relevant device fabrication and current modeling concepts. Furthermore, we distill key insights into recent advances and challenges that may sustain or expand future applications. The future research directions are also carefully analyzed.
format	Article
author	Obite, Felix Ijeomah, Geoffrey Bassi, Joseph Stephen
author_facet	Obite, Felix Ijeomah, Geoffrey Bassi, Joseph Stephen
author_sort	Obite, Felix
title	Carbon nanotube field effect transistors: toward future nanoscale electronics
title_short	Carbon nanotube field effect transistors: toward future nanoscale electronics
title_full	Carbon nanotube field effect transistors: toward future nanoscale electronics
title_fullStr	Carbon nanotube field effect transistors: toward future nanoscale electronics
title_full_unstemmed	Carbon nanotube field effect transistors: toward future nanoscale electronics
title_sort	carbon nanotube field effect transistors: toward future nanoscale electronics
publisher	Taylor & Francis
publishDate	2018
url	http://umpir.ump.edu.my/id/eprint/20372/ http://umpir.ump.edu.my/id/eprint/20372/ http://umpir.ump.edu.my/id/eprint/20372/ http://umpir.ump.edu.my/id/eprint/20372/13/Carbon%20nanotube%20field%20effect%20transistors.pdf
first_indexed	2023-09-18T22:29:20Z
last_indexed	2023-09-18T22:29:20Z
_version_	1777416179836518400

Carbon nanotube field effect transistors: toward future nanoscale electronics

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