Temperature sensitivity based on channel length of FinFET transistor

Temperature sensitivity based on channel length of FinFET transistor

This paper presents the temperature sensitivity of the gate length-based fin field effect transistor (FinFET) and the possibility of using such a transistor as a nano-temperature sensor. The multi-gate field effect transistor (MuGFET) simulation tool is used to investigate the temperature characteri...

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Main Authors: Atalla, Yousif, Hashim, Yasir, Abdul Nasir, Abd Ghafar
Format: Article
Language:English
Published: JACS 2018
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/21391/
http://umpir.ump.edu.my/id/eprint/21391/
http://umpir.ump.edu.my/id/eprint/21391/
http://umpir.ump.edu.my/id/eprint/21391/1/Temperature%20Sensitivity%20based%20on%20Channel%20Length%20of%20FinFET%20Transistor.pdf
id ump-21391
recordtype eprints
spelling ump-213912018-09-07T03:54:51Z http://umpir.ump.edu.my/id/eprint/21391/ Temperature sensitivity based on channel length of FinFET transistor Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar TK Electrical engineering. Electronics Nuclear engineering This paper presents the temperature sensitivity of the gate length-based fin field effect transistor (FinFET) and the possibility of using such a transistor as a nano-temperature sensor. The multi-gate field effect transistor (MuGFET) simulation tool is used to investigate the temperature characteristics of FinFET. Current–voltage characteristics with different temperatures and gate lengths (Lg = 25, 45, 65, 85 and 105 nm) are initially simulated, then the metal oxide semiconductor diode mode connection to measure FinFET temperature sensitivity is considered. The best temperature sensitivity of the FinFET is observed on the basis of the largest ∆I at the working voltage VDD range of 0–5 V. Furthermore, temperature sensitivity of the FinFET increased linearly with channel length at the range of 25–105 nm. JACS 2018 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/21391/1/Temperature%20Sensitivity%20based%20on%20Channel%20Length%20of%20FinFET%20Transistor.pdf Atalla, Yousif and Hashim, Yasir and Abdul Nasir, Abd Ghafar (2018) Temperature sensitivity based on channel length of FinFET transistor. Journal of Nanoscience and Technology, 4 (1). pp. 338-341. ISSN 2455-0191 http://jacsdirectory.com/journal-of-nanoscience-and-technology/admin/issues/20180402054716_4-1-11%20JNST18105%20Published.pdf 10.30799/jnst.105.18040111
repository_type Digital Repository
institution_category Local University
institution Universiti Malaysia Pahang
building UMP Institutional Repository
collection Online Access
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Atalla, Yousif
Hashim, Yasir
Abdul Nasir, Abd Ghafar
Temperature sensitivity based on channel length of FinFET transistor
description This paper presents the temperature sensitivity of the gate length-based fin field effect transistor (FinFET) and the possibility of using such a transistor as a nano-temperature sensor. The multi-gate field effect transistor (MuGFET) simulation tool is used to investigate the temperature characteristics of FinFET. Current–voltage characteristics with different temperatures and gate lengths (Lg = 25, 45, 65, 85 and 105 nm) are initially simulated, then the metal oxide semiconductor diode mode connection to measure FinFET temperature sensitivity is considered. The best temperature sensitivity of the FinFET is observed on the basis of the largest ∆I at the working voltage VDD range of 0–5 V. Furthermore, temperature sensitivity of the FinFET increased linearly with channel length at the range of 25–105 nm.
format Article
author Atalla, Yousif
Hashim, Yasir
Abdul Nasir, Abd Ghafar
author_facet Atalla, Yousif
Hashim, Yasir
Abdul Nasir, Abd Ghafar
author_sort Atalla, Yousif
title Temperature sensitivity based on channel length of FinFET transistor
title_short Temperature sensitivity based on channel length of FinFET transistor
title_full Temperature sensitivity based on channel length of FinFET transistor
title_fullStr Temperature sensitivity based on channel length of FinFET transistor
title_full_unstemmed Temperature sensitivity based on channel length of FinFET transistor
title_sort temperature sensitivity based on channel length of finfet transistor
publisher JACS
publishDate 2018
url http://umpir.ump.edu.my/id/eprint/21391/
http://umpir.ump.edu.my/id/eprint/21391/
http://umpir.ump.edu.my/id/eprint/21391/
http://umpir.ump.edu.my/id/eprint/21391/1/Temperature%20Sensitivity%20based%20on%20Channel%20Length%20of%20FinFET%20Transistor.pdf
first_indexed 2023-09-18T22:31:21Z
last_indexed 2023-09-18T22:31:21Z
_version_ 1777416307015155712

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