Temperature sensitivity based on channel length of FinFET transistor
This paper presents the temperature sensitivity of the gate length-based fin field effect transistor (FinFET) and the possibility of using such a transistor as a nano-temperature sensor. The multi-gate field effect transistor (MuGFET) simulation tool is used to investigate the temperature characteri...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
JACS
2018
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/21391/ http://umpir.ump.edu.my/id/eprint/21391/ http://umpir.ump.edu.my/id/eprint/21391/ http://umpir.ump.edu.my/id/eprint/21391/1/Temperature%20Sensitivity%20based%20on%20Channel%20Length%20of%20FinFET%20Transistor.pdf |