Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)

Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)

This paper presents design the optimal channel dimensions for Silicon Fin Feld Effect Transistor (SiFinFET) for improvement electrical characteristic of Si-FinFET depending on the electrical characteristics of the channel (ION/IOFF, SS, VT, DIBL). The MuGFET simulation tool has been using to investi...

Full description

Bibliographic Details
Main Authors: Mahmood, Ahmed, Hashim, Yasir, Hadi, Manap
Format: Article
Language:English
Published: JACS 2018
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/21632/
http://umpir.ump.edu.my/id/eprint/21632/
http://umpir.ump.edu.my/id/eprint/21632/
http://umpir.ump.edu.my/id/eprint/21632/1/20180715042525_4-4-08%20JNST18132%20Nano-Dimensional%20Properties%20of%20Si-FinFET%20Transistor%20Based%20on%20ION-IOFF%20Ratio%20and%20Subthreshold%20Swing.pdf
id ump-21632
recordtype eprints
spelling ump-216322018-09-14T07:10:53Z http://umpir.ump.edu.my/id/eprint/21632/ Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS) Mahmood, Ahmed Hashim, Yasir Hadi, Manap TK Electrical engineering. Electronics Nuclear engineering This paper presents design the optimal channel dimensions for Silicon Fin Feld Effect Transistor (SiFinFET) for improvement electrical characteristic of Si-FinFET depending on the electrical characteristics of the channel (ION/IOFF, SS, VT, DIBL). The MuGFET simulation tool has been using to investigate the electrical characteristics of Si FinFET. The current voltage characteristics has been simulating with different dimensions channel (length, width and oxide thickness). The best channel dimensions of Si-FinFET observed based on electrical characteristics at the working voltage VDD range of 0-5 V. Note that the results with the scaling channel dimensions. Depending on ION/IOFF ratio higher value, and nearest SS to the ideal SS, the best scaling channel dimensions (K) will be K=0.25 at VDD=5 V and K=0.25 at VDD=0.5 V. JACS 2018 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/21632/1/20180715042525_4-4-08%20JNST18132%20Nano-Dimensional%20Properties%20of%20Si-FinFET%20Transistor%20Based%20on%20ION-IOFF%20Ratio%20and%20Subthreshold%20Swing.pdf Mahmood, Ahmed and Hashim, Yasir and Hadi, Manap (2018) Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS). Journal of Nanoscience and Technology, 4 (4). pp. 431-434. ISSN 2455-0191 https://doi.org/10.30799/jnst.132.18040408 10.30799/jnst.132.18040408
repository_type Digital Repository
institution_category Local University
institution Universiti Malaysia Pahang
building UMP Institutional Repository
collection Online Access
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Mahmood, Ahmed
Hashim, Yasir
Hadi, Manap
Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)
description This paper presents design the optimal channel dimensions for Silicon Fin Feld Effect Transistor (SiFinFET) for improvement electrical characteristic of Si-FinFET depending on the electrical characteristics of the channel (ION/IOFF, SS, VT, DIBL). The MuGFET simulation tool has been using to investigate the electrical characteristics of Si FinFET. The current voltage characteristics has been simulating with different dimensions channel (length, width and oxide thickness). The best channel dimensions of Si-FinFET observed based on electrical characteristics at the working voltage VDD range of 0-5 V. Note that the results with the scaling channel dimensions. Depending on ION/IOFF ratio higher value, and nearest SS to the ideal SS, the best scaling channel dimensions (K) will be K=0.25 at VDD=5 V and K=0.25 at VDD=0.5 V.
format Article
author Mahmood, Ahmed
Hashim, Yasir
Hadi, Manap
author_facet Mahmood, Ahmed
Hashim, Yasir
Hadi, Manap
author_sort Mahmood, Ahmed
title Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)
title_short Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)
title_full Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)
title_fullStr Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)
title_full_unstemmed Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)
title_sort nano-dimensional properties of si-finfet transistor based on ion/ioff ratio and subthreshold swing (ss)
publisher JACS
publishDate 2018
url http://umpir.ump.edu.my/id/eprint/21632/
http://umpir.ump.edu.my/id/eprint/21632/
http://umpir.ump.edu.my/id/eprint/21632/
http://umpir.ump.edu.my/id/eprint/21632/1/20180715042525_4-4-08%20JNST18132%20Nano-Dimensional%20Properties%20of%20Si-FinFET%20Transistor%20Based%20on%20ION-IOFF%20Ratio%20and%20Subthreshold%20Swing.pdf
first_indexed 2023-09-18T22:31:49Z
last_indexed 2023-09-18T22:31:49Z
_version_ 1777416336548298752

Similar Items