Nano-dimensional properties of Si-FinFET transistor based on ION/IOFF ratio and subthreshold swing (SS)
This paper presents design the optimal channel dimensions for Silicon Fin Feld Effect Transistor (SiFinFET) for improvement electrical characteristic of Si-FinFET depending on the electrical characteristics of the channel (ION/IOFF, SS, VT, DIBL). The MuGFET simulation tool has been using to investi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
JACS
2018
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/21632/ http://umpir.ump.edu.my/id/eprint/21632/ http://umpir.ump.edu.my/id/eprint/21632/ http://umpir.ump.edu.my/id/eprint/21632/1/20180715042525_4-4-08%20JNST18132%20Nano-Dimensional%20Properties%20of%20Si-FinFET%20Transistor%20Based%20on%20ION-IOFF%20Ratio%20and%20Subthreshold%20Swing.pdf |
Internet
http://umpir.ump.edu.my/id/eprint/21632/http://umpir.ump.edu.my/id/eprint/21632/
http://umpir.ump.edu.my/id/eprint/21632/
http://umpir.ump.edu.my/id/eprint/21632/1/20180715042525_4-4-08%20JNST18132%20Nano-Dimensional%20Properties%20of%20Si-FinFET%20Transistor%20Based%20on%20ION-IOFF%20Ratio%20and%20Subthreshold%20Swing.pdf