Optimal nano dimensional channel of GaAs-FinFET transistor
This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evalua...
| Main Authors: | , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
IEEE
2018
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/25345/ http://umpir.ump.edu.my/id/eprint/25345/ http://umpir.ump.edu.my/id/eprint/25345/1/57.1%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf http://umpir.ump.edu.my/id/eprint/25345/2/57.%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf |