Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor
In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barr...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Advanced Engineering and Science (IAES)
2019
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/25655/ http://umpir.ump.edu.my/id/eprint/25655/ http://umpir.ump.edu.my/id/eprint/25655/ http://umpir.ump.edu.my/id/eprint/25655/1/Effects%20of%20downscaling%20channel%20dimensions%20on%20electrical.pdf |
| Summary: | In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125). |
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