Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor

In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barr...

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Main Authors:	Mahmood, Ahmed, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Format:	Article
Language:	English
Published:	Institute of Advanced Engineering and Science (IAES) 2019
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/25655/ http://umpir.ump.edu.my/id/eprint/25655/ http://umpir.ump.edu.my/id/eprint/25655/ http://umpir.ump.edu.my/id/eprint/25655/1/Effects%20of%20downscaling%20channel%20dimensions%20on%20electrical.pdf

id	ump-25655
recordtype	eprints
spelling	ump-256552019-08-16T07:49:38Z http://umpir.ump.edu.my/id/eprint/25655/ Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap TK Electrical engineering. Electronics Nuclear engineering In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125). Institute of Advanced Engineering and Science (IAES) 2019 Article PeerReviewed pdf en cc_by_nc_4 http://umpir.ump.edu.my/id/eprint/25655/1/Effects%20of%20downscaling%20channel%20dimensions%20on%20electrical.pdf Mahmood, Ahmed and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2019) Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor. International Journal of Electrical and Computer Engineering (IJECE), 9 (4). pp. 2902-2909. ISSN 2088-8708 http://ijece.iaescore.com/index.php/IJECE/article/view/15510 http://doi.org/10.11591/ijece.v9i4.pp%25p
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor
description	In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).
format	Article
author	Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap
author_facet	Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap
author_sort	Mahmood, Ahmed
title	Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor
title_short	Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor
title_full	Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor
title_fullStr	Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor
title_full_unstemmed	Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor
title_sort	effects of downscaling channel dimensions on electrical characteristics of inas-finfet transistor
publisher	Institute of Advanced Engineering and Science (IAES)
publishDate	2019
url	http://umpir.ump.edu.my/id/eprint/25655/ http://umpir.ump.edu.my/id/eprint/25655/ http://umpir.ump.edu.my/id/eprint/25655/ http://umpir.ump.edu.my/id/eprint/25655/1/Effects%20of%20downscaling%20channel%20dimensions%20on%20electrical.pdf
first_indexed	2023-09-18T22:39:31Z
last_indexed	2023-09-18T22:39:31Z
_version_	1777416820783841280

Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor

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