A temperature characterization of (Si-FinFET) based on channel oxide thickness
This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness–based temperature characteristics is useful to optimi...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universitas Ahmad Dahlan
2019
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/25657/ http://umpir.ump.edu.my/id/eprint/25657/ http://umpir.ump.edu.my/id/eprint/25657/ http://umpir.ump.edu.my/id/eprint/25657/1/A%20temperature%20characterization.pdf |