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4“…Beryllium-doped GaAs layers grown at low temperatures by molecular-beam epitaxy contain localized…”
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5“… Molecular Beam Epitaxy (MBE) or Low Pressure Chemical Vapor Deposition(LPCVD) techniques[2-5]. However…”
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6“…The main objective of this research is to optimize the trench depth, trench width, epitaxial…”
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7by Yaakob, Muhamad Kamil“…, morphotropic phase boundary and physical properties of epitaxial BiFeCb thin film were further investigated…”
Published 2015
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8by Yaakob, Muhamad Kamil“…, morphotropic phase boundary and physical properties of epitaxial BiFeO₃ thin film were further investigated…”
Published 2015
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9by Nur Aqilah, Othman“… ) is required to minimise the internal resistance.Moreover, the doping concentration of N-epitaxial drift region…”
Published 2012
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