p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

by Liu, H. Y., Liew, S. L., Badcock, T., Mowbray, D. J., Skolnick, M. S., Ray, S. K., Choi, T. L., Groom, K. M., Stevens, B., Hasbullah, Nurul Fadzlin, Jin, C. Y., Hopkinson, M., Hogg, R. A.
Published 2006