p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
Amodification of the thickness of the low-growth- emperature component of the GaAs spacer layers in multilayer 1.3 um InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics
2006
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/1306/ http://irep.iium.edu.my/1306/ http://irep.iium.edu.my/1306/ http://irep.iium.edu.my/1306/1/p-doped__1.3um_InAs-GaAs_QD_laser-Liu_2006.pdf |
| Summary: | Amodification of the thickness of the low-growth- emperature component of the GaAs spacer layers in multilayer 1.3 um InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15 to 2 nm results in a reduced reverse bias leakage current and an increase in the
intensity of the spontaneous emission. In addition, a significant reduction of the threshold current density and an increase of the external differential efficiency at room temperature are obtained. These improvements indicate a reduced defect density, most probably a combination of the selective elimination of a very low density of dislocated dots and a smaller number of defects in the thinner low-growth-temperature component of the GaAs spacer layer. |
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