Reverse leakage current mechanisms in quantum dot laser structures
Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth conditions of the GaAs barrier layer. A systematic study of their temperature dependence suggests that the main mechanism determining the rever...
| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
2011
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/1/IEEE_MnN_vs_7.pdf http://irep.iium.edu.my/17653/4/Reverse_leakage_current_mechanisms_in_quantum.pdf |