Reverse leakage current mechanisms in quantum dot laser structures
Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth conditions of the GaAs barrier layer. A systematic study of their temperature dependence suggests that the main mechanism determining the rever...
| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
2011
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/1/IEEE_MnN_vs_7.pdf http://irep.iium.edu.my/17653/4/Reverse_leakage_current_mechanisms_in_quantum.pdf |
| Summary: | Dark current-voltage measurements undertaken on a
series of InAs based quantum dot laser structures show
significant variations depending on the growth
conditions of the GaAs barrier layer. A systematic
study of their temperature dependence suggests that
the main mechanism determining the reverse leakage
is due to generation–recombination via mid-band traps
assisted by Frenkel-Poole emission of carriers from
these traps. Since the dark current is a relatively
parameter to determine in a device, optimising this is a
quicker means of optimising the growth parameters
than undertaking full laser testing.
I. INTRODUCTION |
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