Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics
2013
|
| Subjects: | |
| Online Access: | http://irep.iium.edu.my/29871/ http://irep.iium.edu.my/29871/ http://irep.iium.edu.my/29871/ http://irep.iium.edu.my/29871/1/original_copy_manu_JAP2012.pdf |