Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers
Magnetic properties resulting from localized spins associated with antisite arsenic ions AsGa+ in Be-doped low-temperature-grown GaAs (LT-GaAs) layers were studied by measuring the magnetization of lift-off samples. With fast cooling, the magnetization of samples at 1.8 K becomes significantly lower...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics Inc.
2011
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/29874/ http://irep.iium.edu.my/29874/ http://irep.iium.edu.my/29874/ http://irep.iium.edu.my/29874/1/JApplPhys_110_123716.pdf |