APA (7th ed.) Citation

Mohamed, M. A., Tien Lam, P., Bae, K. W., & Otsuka, N. (2011). Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers. American Institute of Physics Inc.

Chicago Style (17th ed.) Citation

Mohamed, Mohd Ambri, Pham Tien Lam, K. W. Bae, and Nobuo Otsuka. Cooperative Transition of Electronic States of Antisite As Defects in Be-doped Low-temperature-grown GaAs Layers. American Institute of Physics Inc, 2011.

MLA (8th ed.) Citation

Mohamed, Mohd Ambri, et al. Cooperative Transition of Electronic States of Antisite As Defects in Be-doped Low-temperature-grown GaAs Layers. American Institute of Physics Inc, 2011.