Device characteristics of carbon nanotube transistor fabricated by direct growth method
We have fabricated carbon nanotube �CNT� field-effect transistors �FETs� by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device characteris...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics Inc.
2008
|
| Subjects: | |
| Online Access: | http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/1/ambri_apl.pdf |