The study on the aspect ratio of Atomic Force Microscope (AFM) measurements for Triangular Silicon Nanowire
A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. The use of ODE etchant such as potassium hydroxide (KOH) and Tetra-Methyl Ammonium H...
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| Format: | Conference or Workshop Item |
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2013
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| Online Access: | http://irep.iium.edu.my/33715/ http://irep.iium.edu.my/33715/ http://irep.iium.edu.my/33715/1/1569793019_The_Study_on_the_Aspect_Ratio_of_AFM_Measurements_for_Triangular_Si_NW.pdf http://irep.iium.edu.my/33715/4/IEEE-presentation_schedule.pdf |
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iium-337152014-01-08T03:29:30Z http://irep.iium.edu.my/33715/ The study on the aspect ratio of Atomic Force Microscope (AFM) measurements for Triangular Silicon Nanowire Za'bah, Nor Farahidah Kwa, Kelvin S. K. O'Neill, Anthony TA213 Engineering machinery, tools, and implements TA401 Materials of engineering and construction A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. The use of ODE etchant such as potassium hydroxide (KOH) and Tetra-Methyl Ammonium Hydroxide (TMAH) is known to create geometrical structures due to its anisotropic mechanism of etching. In this process flow, using the <100> SOI substrate, a triangular shape silicon nanowire is successfully fabricated. The triangle silicon nanowire has <111> planes on each side which theoretically produces an angle of 54.7 with the <100> horizontal plane. One of the geometrical characterizing methods that were used to confirm the fabrication of the silicon nanowire is by using Atomic Force Microscope (AFM). In this paper, the study on the aspect ratio of the AFM measurements is presented. This experimental study would demonstrate the importance of having a high aspect ratio cantilever when a nanowire with a thickness of less than 200 nm is concerned 2013 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/33715/1/1569793019_The_Study_on_the_Aspect_Ratio_of_AFM_Measurements_for_Triangular_Si_NW.pdf application/pdf en http://irep.iium.edu.my/33715/4/IEEE-presentation_schedule.pdf Za'bah, Nor Farahidah and Kwa, Kelvin S. K. and O'Neill, Anthony (2013) The study on the aspect ratio of Atomic Force Microscope (AFM) measurements for Triangular Silicon Nanowire. In: 2013 IEEE Regional Symposium on Micro and Nano Electronics (RSM 2013), 25-27 September 2013, Langkawi, Malaysia. (In Press) http://www.ieeemalaysia-eds.org/rsm2013/index.php?option=com_content&view=article&id=46:2013-ieee-regional-symposium-on-micro-and-nanoelectronics&Itemid=28 |
| repository_type |
Digital Repository |
| institution_category |
Local University |
| institution |
International Islamic University Malaysia |
| building |
IIUM Repository |
| collection |
Online Access |
| language |
English English |
| topic |
TA213 Engineering machinery, tools, and implements TA401 Materials of engineering and construction |
| spellingShingle |
TA213 Engineering machinery, tools, and implements TA401 Materials of engineering and construction Za'bah, Nor Farahidah Kwa, Kelvin S. K. O'Neill, Anthony The study on the aspect ratio of Atomic Force Microscope (AFM) measurements for Triangular Silicon Nanowire |
| description |
A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. The use of ODE etchant such as potassium hydroxide (KOH) and Tetra-Methyl Ammonium Hydroxide (TMAH) is known to create geometrical structures due to its anisotropic mechanism of etching. In this process flow, using the <100> SOI substrate, a triangular shape silicon nanowire is successfully fabricated. The triangle silicon nanowire has <111> planes on each side which theoretically produces an angle of 54.7 with the <100> horizontal plane. One of the geometrical characterizing methods that were used to confirm the fabrication of the silicon nanowire is by using Atomic Force Microscope (AFM). In this paper, the study on the aspect ratio of the AFM measurements is presented. This experimental study would demonstrate the importance of having a high aspect ratio cantilever when a nanowire with a thickness of less than 200 nm is concerned |
| format |
Conference or Workshop Item |
| author |
Za'bah, Nor Farahidah Kwa, Kelvin S. K. O'Neill, Anthony |
| author_facet |
Za'bah, Nor Farahidah Kwa, Kelvin S. K. O'Neill, Anthony |
| author_sort |
Za'bah, Nor Farahidah |
| title |
The study on the aspect ratio of Atomic Force Microscope (AFM) measurements for Triangular Silicon Nanowire |
| title_short |
The study on the aspect ratio of Atomic Force Microscope (AFM) measurements for Triangular Silicon Nanowire |
| title_full |
The study on the aspect ratio of Atomic Force Microscope (AFM) measurements for Triangular Silicon Nanowire |
| title_fullStr |
The study on the aspect ratio of Atomic Force Microscope (AFM) measurements for Triangular Silicon Nanowire |
| title_full_unstemmed |
The study on the aspect ratio of Atomic Force Microscope (AFM) measurements for Triangular Silicon Nanowire |
| title_sort |
study on the aspect ratio of atomic force microscope (afm) measurements for triangular silicon nanowire |
| publishDate |
2013 |
| url |
http://irep.iium.edu.my/33715/ http://irep.iium.edu.my/33715/ http://irep.iium.edu.my/33715/1/1569793019_The_Study_on_the_Aspect_Ratio_of_AFM_Measurements_for_Triangular_Si_NW.pdf http://irep.iium.edu.my/33715/4/IEEE-presentation_schedule.pdf |
| first_indexed |
2023-09-18T20:48:45Z |
| last_indexed |
2023-09-18T20:48:45Z |
| _version_ |
1777409852314746880 |