Channel length effect on the saturation current and the threshold voltages of CNTFET
Carbon nanotubes (CNTs) are such promising material in future microelectronic devices due to their great property in conductivity, mechanical strength and light weight. Field effect transistor (FET) has already come to its most maximum efficiency because of their reduced size leads to decrease in...
Main Authors: | , , |
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Format: | Conference or Workshop Item |
Language: | English |
Published: |
IEEE
2014
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Subjects: | |
Online Access: | http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/1/Channel_length_effect_on_the_saturation_current_and_the_threshold_voltages_of_cntfet.pdf |