DIBL and subthreshold swing effect on carbon nanotube field effect transistor
Silicon based devices are getting problem with the limitation of channel length for fabrication of the miniature size. Short channel effects are creating such problem of the silicon devices. Thus CNT is a smart choice for replacement with the silicon. A brief analysis of the effect of short channel...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/44492/ http://irep.iium.edu.my/44492/ http://irep.iium.edu.my/44492/1/WCE2015_pp455-458.pdf http://irep.iium.edu.my/44492/4/44492_DIBL%20and%20subthreshold%20swing%20effect%20on%20carbon%20nanotube%20field%20effect%20transistor_SCOPUS.pdf |