Effect of single event upset on 6T and 12T 32NM CMOS SRAMs circuit
Static random access memory cells (SRAM) are high-speed semiconductor memory that uses flip-flop to store each bit. Over the years, technology scaling of complementary metaloxide semiconductor (CMOS) devices has also resulted in the scaling of SRAM using minimum-size transistors. As transistor si...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
Penerbit UMT, Universiti Malaysia Terengganu (UMT)
2016
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/51579/ http://irep.iium.edu.my/51579/ http://irep.iium.edu.my/51579/1/51579_Effect%20of%20single%20event.pdf |