Effect of the flash annealing on the impurity distribution and the electronic structure in the inversion layer
We investigated the relationship among the number of flash annealing times to obtain Si clean surface and the change of arsenic dopant concentration and subband levels using secondary ion mass spectroscopy (SIMS) and angle-resolved photoelectron spectroscopy(ARPES). The SIMS result shows that the...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
Surface Science Society of Japan
2015
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/56960/ http://irep.iium.edu.my/56960/ http://irep.iium.edu.my/56960/1/56960_Effect%20of%20the%20Flash%20Annealing%20on%20the%20Impurity%20_article.pdf http://irep.iium.edu.my/56960/2/56960_Effect%20of%20the%20Flash%20Annealing%20on%20the%20Impurity%20_scopus.pdf |