Effect of the flash annealing on the impurity distribution and the electronic structure in the inversion layer
We investigated the relationship among the number of flash annealing times to obtain Si clean surface and the change of arsenic dopant concentration and subband levels using secondary ion mass spectroscopy (SIMS) and angle-resolved photoelectron spectroscopy(ARPES). The SIMS result shows that the...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
Surface Science Society of Japan
2015
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/56960/ http://irep.iium.edu.my/56960/ http://irep.iium.edu.my/56960/1/56960_Effect%20of%20the%20Flash%20Annealing%20on%20the%20Impurity%20_article.pdf http://irep.iium.edu.my/56960/2/56960_Effect%20of%20the%20Flash%20Annealing%20on%20the%20Impurity%20_scopus.pdf |
| Summary: | We investigated the relationship among the number of flash annealing times to obtain Si clean surface and the
change of arsenic dopant concentration and subband levels using secondary ion mass spectroscopy (SIMS) and
angle-resolved photoelectron spectroscopy(ARPES). The SIMS result shows that the first five times of the flash
annealing already induces significant reduction of the dopant concentration in agreement with the recent work
[Pitter et al., J. Vac. Sci. Technol. B 30, 021806 (2012)]. We found the energies of hole subband levels rapidly
decrease as the number of the flash annealing times increases. We calculated the subband levels in a broadened
confinement potential taking the dopant reduction determined by SIMS into account. The energy separations of
the calculated subband levels were in good agreement with the ARPES results. [DOI: 10.1380/ejssnt.2015.75] |
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