Effect of acceptor impurity (Cu and Al) in Zn4Sb3 thermoelectric materials via hotisostatic pressing (HIP) method

This project investigates the influence of dopants use via hot-isostatic pressing (HIP) sintering technique on thermoelectric properties. A total of 8 samples weighing 3 g each at different compositions (Zn4-xMxSb3) (M = Cu, Al) (x= 0, 0.3, 0.6 at.%) were prepared via powder metallurgy technique an...

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Main Authors:	Nor Hairin, Assayidatul Laila, Idris, Mohd Fitri, Othman, Raihan, Mohd Daud, Farah Diana, Rozhan, Alya Naili, Mohd Zaki, Hafizah Hanim
Format:	Conference or Workshop Item
Language:	English English English
Published:	AIP Publishing. 2019
Subjects:	TA401 Materials of engineering and construction TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/70582/ http://irep.iium.edu.my/70582/ http://irep.iium.edu.my/70582/ http://irep.iium.edu.my/70582/7/70582%20Effect%20of%20Acceptor%20Impurity.pdf http://irep.iium.edu.my/70582/13/70582_Effect%20of%20acceptor%20impurity%20%28Cu%20and%20Al%29%20_scopus.pdf http://irep.iium.edu.my/70582/19/70582_Effect%20of%20acceptor%20impurity_wos.pdf

id	iium-70582
recordtype	eprints
spelling	iium-705822019-07-18T08:25:56Z http://irep.iium.edu.my/70582/ Effect of acceptor impurity (Cu and Al) in Zn4Sb3 thermoelectric materials via hotisostatic pressing (HIP) method Nor Hairin, Assayidatul Laila Idris, Mohd Fitri Othman, Raihan Mohd Daud, Farah Diana Rozhan, Alya Naili Mohd Zaki, Hafizah Hanim TA401 Materials of engineering and construction TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices This project investigates the influence of dopants use via hot-isostatic pressing (HIP) sintering technique on thermoelectric properties. A total of 8 samples weighing 3 g each at different compositions (Zn4-xMxSb3) (M = Cu, Al) (x= 0, 0.3, 0.6 at.%) were prepared via powder metallurgy technique and followed by HIP sintering process. The relativedensity of all the samples recorded 85-95% which is comparable to the published data. From the XRD results, a near single phase of Zn4Sb3 was obtained. The SEM images revealed a minor of porous surface exist and showed metallurgical bonding formed in the prepared samples. From thermoelectric properties characterization, Cu showed as an effective element to lower the electrical resistivity as compared to Al when Sample 6 (Zn3.4Cu0.6Sb3) recorded 16.18×10-5 Ωm and Sample 8 (Zn3.4Al0.6Sb3) was 27.09×10-5 Ωm. The results showed that HIP sintering technique at lower temperature compare to other studies offers potential processing route to produce a good thermoelectric material associated with the doping element. AIP Publishing. 2019-02-06 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/70582/7/70582%20Effect%20of%20Acceptor%20Impurity.pdf application/pdf en http://irep.iium.edu.my/70582/13/70582_Effect%20of%20acceptor%20impurity%20%28Cu%20and%20Al%29%20_scopus.pdf application/pdf en http://irep.iium.edu.my/70582/19/70582_Effect%20of%20acceptor%20impurity_wos.pdf Nor Hairin, Assayidatul Laila and Idris, Mohd Fitri and Othman, Raihan and Mohd Daud, Farah Diana and Rozhan, Alya Naili and Mohd Zaki, Hafizah Hanim (2019) Effect of acceptor impurity (Cu and Al) in Zn4Sb3 thermoelectric materials via hotisostatic pressing (HIP) method. In: Materials characterization using x-rays and related techniques, 18th-19th August 2018, Kota Bharu Kelantan. https://aip.scitation.org/doi/abs/10.1063/1.5089307 10.1063/1.5089307
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English English
topic	TA401 Materials of engineering and construction TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TA401 Materials of engineering and construction TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Nor Hairin, Assayidatul Laila Idris, Mohd Fitri Othman, Raihan Mohd Daud, Farah Diana Rozhan, Alya Naili Mohd Zaki, Hafizah Hanim Effect of acceptor impurity (Cu and Al) in Zn4Sb3 thermoelectric materials via hotisostatic pressing (HIP) method
description	This project investigates the influence of dopants use via hot-isostatic pressing (HIP) sintering technique on thermoelectric properties. A total of 8 samples weighing 3 g each at different compositions (Zn4-xMxSb3) (M = Cu, Al) (x= 0, 0.3, 0.6 at.%) were prepared via powder metallurgy technique and followed by HIP sintering process. The relativedensity of all the samples recorded 85-95% which is comparable to the published data. From the XRD results, a near single phase of Zn4Sb3 was obtained. The SEM images revealed a minor of porous surface exist and showed metallurgical bonding formed in the prepared samples. From thermoelectric properties characterization, Cu showed as an effective element to lower the electrical resistivity as compared to Al when Sample 6 (Zn3.4Cu0.6Sb3) recorded 16.18×10-5 Ωm and Sample 8 (Zn3.4Al0.6Sb3) was 27.09×10-5 Ωm. The results showed that HIP sintering technique at lower temperature compare to other studies offers potential processing route to produce a good thermoelectric material associated with the doping element.
format	Conference or Workshop Item
author	Nor Hairin, Assayidatul Laila Idris, Mohd Fitri Othman, Raihan Mohd Daud, Farah Diana Rozhan, Alya Naili Mohd Zaki, Hafizah Hanim
author_facet	Nor Hairin, Assayidatul Laila Idris, Mohd Fitri Othman, Raihan Mohd Daud, Farah Diana Rozhan, Alya Naili Mohd Zaki, Hafizah Hanim
author_sort	Nor Hairin, Assayidatul Laila
title	Effect of acceptor impurity (Cu and Al) in Zn4Sb3 thermoelectric materials via hotisostatic pressing (HIP) method
title_short	Effect of acceptor impurity (Cu and Al) in Zn4Sb3 thermoelectric materials via hotisostatic pressing (HIP) method
title_full	Effect of acceptor impurity (Cu and Al) in Zn4Sb3 thermoelectric materials via hotisostatic pressing (HIP) method
title_fullStr	Effect of acceptor impurity (Cu and Al) in Zn4Sb3 thermoelectric materials via hotisostatic pressing (HIP) method
title_full_unstemmed	Effect of acceptor impurity (Cu and Al) in Zn4Sb3 thermoelectric materials via hotisostatic pressing (HIP) method
title_sort	effect of acceptor impurity (cu and al) in zn4sb3 thermoelectric materials via hotisostatic pressing (hip) method
publisher	AIP Publishing.
publishDate	2019
url	http://irep.iium.edu.my/70582/ http://irep.iium.edu.my/70582/ http://irep.iium.edu.my/70582/ http://irep.iium.edu.my/70582/7/70582%20Effect%20of%20Acceptor%20Impurity.pdf http://irep.iium.edu.my/70582/13/70582_Effect%20of%20acceptor%20impurity%20%28Cu%20and%20Al%29%20_scopus.pdf http://irep.iium.edu.my/70582/19/70582_Effect%20of%20acceptor%20impurity_wos.pdf
first_indexed	2023-09-18T21:40:11Z
last_indexed	2023-09-18T21:40:11Z
_version_	1777413087628886016

Effect of acceptor impurity (Cu and Al) in Zn4Sb3 thermoelectric materials via hotisostatic pressing (HIP) method

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