Reliability study of silicon carbide Schottky Diode with fast electron irradiation
The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose of 10 and 15 MGy at room temperature, the forward current density-voltage characteristic of INFINEON and STMICROELECTRONICS devices have been...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2018
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/1/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky%20Diode_SCOPUS.pdf http://irep.iium.edu.my/70791/2/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky.pdf |
Internet
http://irep.iium.edu.my/70791/http://irep.iium.edu.my/70791/
http://irep.iium.edu.my/70791/
http://irep.iium.edu.my/70791/1/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky%20Diode_SCOPUS.pdf
http://irep.iium.edu.my/70791/2/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky.pdf