Material characterization of a doped triangular silicon nanowire using raman spectroscopy
A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using a doped Silicon-on Insulator (SOI) as the starting substrate. The use of ODE etchant such as potassium hydroxide (KOH) and Tetra-Methyl Ammonium Hydroxi...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
American Scientific Publishers
2018
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/71148/ http://irep.iium.edu.my/71148/ http://irep.iium.edu.my/71148/1/71148_Material%20Characterization%20of%20a%20Doped%20Triangular.pdf http://irep.iium.edu.my/71148/2/71148_Material%20Characterization%20of%20a%20Doped%20Triangular_WOS.pdf |