Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reducti...

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Bibliographic Details
Main Authors: Mohd Khairi, Mohamad Azim, Ab Rahim, Rosminazuin, Saidin, Norazlina, Abdullah, Yusof, Hasbullah, Nurul Fadzlin
Format: Article
Language:English
English
Published: Lembaga Penerbitan dan Publikasi Ilmiah (LPPI), Universitas Ahmad Dahlan 2019
Subjects:
QC Physics
TK Electrical engineering. Electronics Nuclear engineering
TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:http://irep.iium.edu.my/72556/
http://irep.iium.edu.my/72556/
http://irep.iium.edu.my/72556/
http://irep.iium.edu.my/72556/1/72556_Silicon%20carbide%20schottky%20diodes%20forward.pdf
http://irep.iium.edu.my/72556/7/72556_Silicon%20carbide%20schottky%20diodes%20forward%20and%20reverse%20current%20properties%20upon%20fast%20electron%20radiation_Scopus.pdf

Internet

http://irep.iium.edu.my/72556/
http://irep.iium.edu.my/72556/
http://irep.iium.edu.my/72556/
http://irep.iium.edu.my/72556/1/72556_Silicon%20carbide%20schottky%20diodes%20forward.pdf
http://irep.iium.edu.my/72556/7/72556_Silicon%20carbide%20schottky%20diodes%20forward%20and%20reverse%20current%20properties%20upon%20fast%20electron%20radiation_Scopus.pdf

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