Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes

We study the effect of electron irradiation on the electrical and optical characteristics of commercial gallium-nitride light emitting diodes in the fluence region from 1015 to 1017 electrons/cm2. After electron irradiation, the forward leakage current shows no significant changes, while the reverse...

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Bibliographic Details
Main Authors: Hedzir, Anati Syahirah, Muridan, Norasmahan, Yusof, Abdullah, Hasbullah, Nurul Fadzlin
Format: Article
Language:English
English
English
Published: Vlokh Institute of Physical Optics, 2019
Subjects:
Online Access:http://irep.iium.edu.my/75400/
http://irep.iium.edu.my/75400/
http://irep.iium.edu.my/75400/
http://irep.iium.edu.my/75400/1/75400_Effect%20of%20electron%20irradiation.pdf
http://irep.iium.edu.my/75400/2/75400_Effect%20of%20electron%20irradiation_WOS.pdf
http://irep.iium.edu.my/75400/13/75400_Effect%20of%20electron%20irradiation%20on%20the%20electrical%20and%20optical%20characteristics%20of%20gallium-nitride%20light%20emitting%20diodes_Scopus.pdf