Switching characteristics of SRO-MISS devices

The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS) device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been studied at room temperature. The SRO films were deposited by atmospheric pressure chemical vapour deposition (APCvD) at 650°C with SiH4 a...

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Bibliographic Details
Main Authors: Burhanuddin Yeop Majfis, M. J. Morant
Format: Article
Published: 1991
Online Access:http://journalarticle.ukm.my/1293/
http://journalarticle.ukm.my/1293/