Switching characteristics of SRO-MISS devices
The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS) device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been studied at room temperature. The SRO films were deposited by atmospheric pressure chemical vapour deposition (APCvD) at 650°C with SiH4 a...
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1991
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| Online Access: | http://journalarticle.ukm.my/1293/ http://journalarticle.ukm.my/1293/ |
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ukm-1293 |
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eprints |
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ukm-12932011-10-11T03:45:25Z http://journalarticle.ukm.my/1293/ Switching characteristics of SRO-MISS devices Burhanuddin Yeop Majfis, M. J. Morant, The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS) device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been studied at room temperature. The SRO films were deposited by atmospheric pressure chemical vapour deposition (APCvD) at 650°C with SiH4 and N20 reactant gases and N2 carrier. The reactant gas phase ratio, R, varies from 0.09 to 0.25 and the deposition time from 0.6 to 2 minutes 1991 Article PeerReviewed Burhanuddin Yeop Majfis, and M. J. Morant, (1991) Switching characteristics of SRO-MISS devices. Jurnal Kejuruteraan, 3 . pp. 47-56. http://www.ukm.my/jkukm/index.php/jkukm |
| repository_type |
Digital Repository |
| institution_category |
Local University |
| institution |
Universiti Kebangasaan Malaysia |
| building |
UKM Institutional Repository |
| collection |
Online Access |
| description |
The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS)
device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been
studied at room temperature. The SRO films were deposited by atmospheric pressure
chemical vapour deposition (APCvD) at 650°C with SiH4 and N20 reactant gases and
N2 carrier. The reactant gas phase ratio, R, varies from 0.09 to 0.25 and the
deposition time from 0.6 to 2 minutes |
| format |
Article |
| author |
Burhanuddin Yeop Majfis, M. J. Morant, |
| spellingShingle |
Burhanuddin Yeop Majfis, M. J. Morant, Switching characteristics of SRO-MISS devices |
| author_facet |
Burhanuddin Yeop Majfis, M. J. Morant, |
| author_sort |
Burhanuddin Yeop Majfis, |
| title |
Switching characteristics of SRO-MISS devices |
| title_short |
Switching characteristics of SRO-MISS devices |
| title_full |
Switching characteristics of SRO-MISS devices |
| title_fullStr |
Switching characteristics of SRO-MISS devices |
| title_full_unstemmed |
Switching characteristics of SRO-MISS devices |
| title_sort |
switching characteristics of sro-miss devices |
| publishDate |
1991 |
| url |
http://journalarticle.ukm.my/1293/ http://journalarticle.ukm.my/1293/ |
| first_indexed |
2023-09-18T19:32:55Z |
| last_indexed |
2023-09-18T19:32:55Z |
| _version_ |
1777405081253052416 |