Switching characteristics of SRO-MISS devices
The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS) device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been studied at room temperature. The SRO films were deposited by atmospheric pressure chemical vapour deposition (APCvD) at 650°C with SiH4 a...
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| Format: | Article |
| Published: |
1991
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| Online Access: | http://journalarticle.ukm.my/1293/ http://journalarticle.ukm.my/1293/ |