Optical constants and electronic transition in hydrogenated silicon (Si:H) thin films deposited by layer-by-layer (LBL) deposition technique

Optical constants derived from optical transmission (T) and reflectance (R) spectra in the wavelength range of 220 to 2200 nm are presented in this paper for hydrogenated silicon (Si:H) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) using the layer-by-layer (LBL) depositio...

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Main Authors:	Goh, Boon Tong, Muhamad Rasat Muhamad, Saadah Abdul Rahman
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2011
Online Access:	http://journalarticle.ukm.my/2448/ http://journalarticle.ukm.my/2448/ http://journalarticle.ukm.my/2448/1/13_Goh.pdf

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spelling	ukm-24482016-12-14T06:31:38Z http://journalarticle.ukm.my/2448/ Optical constants and electronic transition in hydrogenated silicon (Si:H) thin films deposited by layer-by-layer (LBL) deposition technique Goh, Boon Tong Muhamad Rasat Muhamad, Saadah Abdul Rahman, Optical constants derived from optical transmission (T) and reflectance (R) spectra in the wavelength range of 220 to 2200 nm are presented in this paper for hydrogenated silicon (Si:H) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) using the layer-by-layer (LBL) deposition technique. The films were deposited on quartz substrate by decomposition of SiH4 and H2 gases at flow-rate of 5 sccm and 20 sccm, respectively. The substrate temperature, deposition pressure and deposition rate are 100°C, 0.8 mbar and 2.8 nm/s, respectively. The as-prepared films were annealed in nitrogen for one hour at annealing temperatures of 400°C, 600°C, 800°C and 1000°C. The as-prepared film thickness of 301 nm decreased to 260 nm when samples were annealed at 1000°C. The refractive indices (~ 3.0 to 3.4) of annealed films were determined from the interference fringes of transmission spectrum following Manifacier and Davies methods. The electronic transition from valence band to conduction band in these films are characterized from the optical energy gap; EG (~1.64 to 2.41 eV), the dispersion energy; Ed (~26.4 to 34.0 eV) and the oscillator strength; Eo (~2.8 to 3.2 eV). It is interesting to note that EG is lowest for the films annealed at temperature of 600°C which has the lowest hydrogen content, CH in the film. Evidence of the presence of nanocrystallites formed in amorphous matrix is also observed for the films annealed at temperatures above 600°C. Universiti Kebangsaan Malaysia 2011-01 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/2448/1/13_Goh.pdf Goh, Boon Tong and Muhamad Rasat Muhamad, and Saadah Abdul Rahman, (2011) Optical constants and electronic transition in hydrogenated silicon (Si:H) thin films deposited by layer-by-layer (LBL) deposition technique. Sains Malaysiana, 40 (1). pp. 59-62. ISSN 0126-6039 http://www.ukm.my/jsm/
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
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language	English
description	Optical constants derived from optical transmission (T) and reflectance (R) spectra in the wavelength range of 220 to 2200 nm are presented in this paper for hydrogenated silicon (Si:H) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) using the layer-by-layer (LBL) deposition technique. The films were deposited on quartz substrate by decomposition of SiH4 and H2 gases at flow-rate of 5 sccm and 20 sccm, respectively. The substrate temperature, deposition pressure and deposition rate are 100°C, 0.8 mbar and 2.8 nm/s, respectively. The as-prepared films were annealed in nitrogen for one hour at annealing temperatures of 400°C, 600°C, 800°C and 1000°C. The as-prepared film thickness of 301 nm decreased to 260 nm when samples were annealed at 1000°C. The refractive indices (~ 3.0 to 3.4) of annealed films were determined from the interference fringes of transmission spectrum following Manifacier and Davies methods. The electronic transition from valence band to conduction band in these films are characterized from the optical energy gap; EG (~1.64 to 2.41 eV), the dispersion energy; Ed (~26.4 to 34.0 eV) and the oscillator strength; Eo (~2.8 to 3.2 eV). It is interesting to note that EG is lowest for the films annealed at temperature of 600°C which has the lowest hydrogen content, CH in the film. Evidence of the presence of nanocrystallites formed in amorphous matrix is also observed for the films annealed at temperatures above 600°C.
format	Article
author	Goh, Boon Tong Muhamad Rasat Muhamad, Saadah Abdul Rahman,
spellingShingle	Goh, Boon Tong Muhamad Rasat Muhamad, Saadah Abdul Rahman, Optical constants and electronic transition in hydrogenated silicon (Si:H) thin films deposited by layer-by-layer (LBL) deposition technique
author_facet	Goh, Boon Tong Muhamad Rasat Muhamad, Saadah Abdul Rahman,
author_sort	Goh, Boon Tong
title	Optical constants and electronic transition in hydrogenated silicon (Si:H) thin films deposited by layer-by-layer (LBL) deposition technique
title_short	Optical constants and electronic transition in hydrogenated silicon (Si:H) thin films deposited by layer-by-layer (LBL) deposition technique
title_full	Optical constants and electronic transition in hydrogenated silicon (Si:H) thin films deposited by layer-by-layer (LBL) deposition technique
title_fullStr	Optical constants and electronic transition in hydrogenated silicon (Si:H) thin films deposited by layer-by-layer (LBL) deposition technique
title_full_unstemmed	Optical constants and electronic transition in hydrogenated silicon (Si:H) thin films deposited by layer-by-layer (LBL) deposition technique
title_sort	optical constants and electronic transition in hydrogenated silicon (si:h) thin films deposited by layer-by-layer (lbl) deposition technique
publisher	Universiti Kebangsaan Malaysia
publishDate	2011
url	http://journalarticle.ukm.my/2448/ http://journalarticle.ukm.my/2448/ http://journalarticle.ukm.my/2448/1/13_Goh.pdf
first_indexed	2023-09-18T19:36:06Z
last_indexed	2023-09-18T19:36:06Z
_version_	1777405280808599552

Optical constants and electronic transition in hydrogenated silicon (Si:H) thin films deposited by layer-by-layer (LBL) deposition technique

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