A Review on modeling the channel potential in multi-gate MOSFETs
This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enabl...
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Universiti Kebangsaan Malaysia
2014
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| Online Access: | http://journalarticle.ukm.my/7174/ http://journalarticle.ukm.my/7174/ http://journalarticle.ukm.my/7174/1/07_Hossein_Mohammadi.pdf |
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ukm-71742016-12-14T06:43:18Z http://journalarticle.ukm.my/7174/ A Review on modeling the channel potential in multi-gate MOSFETs Hossein Mohammadi, Huda Abdullah, Chang, Fu Dee This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly. Universiti Kebangsaan Malaysia 2014-06 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/7174/1/07_Hossein_Mohammadi.pdf Hossein Mohammadi, and Huda Abdullah, and Chang, Fu Dee (2014) A Review on modeling the channel potential in multi-gate MOSFETs. Sains Malaysiana, 43 (6). pp. 861-866. ISSN 0126-6039 http://www.ukm.my/jsm/ |
| repository_type |
Digital Repository |
| institution_category |
Local University |
| institution |
Universiti Kebangasaan Malaysia |
| building |
UKM Institutional Repository |
| collection |
Online Access |
| language |
English |
| description |
This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly. |
| format |
Article |
| author |
Hossein Mohammadi, Huda Abdullah, Chang, Fu Dee |
| spellingShingle |
Hossein Mohammadi, Huda Abdullah, Chang, Fu Dee A Review on modeling the channel potential in multi-gate MOSFETs |
| author_facet |
Hossein Mohammadi, Huda Abdullah, Chang, Fu Dee |
| author_sort |
Hossein Mohammadi, |
| title |
A Review on modeling the channel potential in multi-gate MOSFETs |
| title_short |
A Review on modeling the channel potential in multi-gate MOSFETs |
| title_full |
A Review on modeling the channel potential in multi-gate MOSFETs |
| title_fullStr |
A Review on modeling the channel potential in multi-gate MOSFETs |
| title_full_unstemmed |
A Review on modeling the channel potential in multi-gate MOSFETs |
| title_sort |
review on modeling the channel potential in multi-gate mosfets |
| publisher |
Universiti Kebangsaan Malaysia |
| publishDate |
2014 |
| url |
http://journalarticle.ukm.my/7174/ http://journalarticle.ukm.my/7174/ http://journalarticle.ukm.my/7174/1/07_Hossein_Mohammadi.pdf |
| first_indexed |
2023-09-18T19:48:56Z |
| last_indexed |
2023-09-18T19:48:56Z |
| _version_ |
1777406088996454400 |