Trench DMOS interface trap characterization by three-terminal charge pumping measurement
The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal–Oxide–Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control moni...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2012
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Subjects: | |
Online Access: | http://irep.iium.edu.my/27128/ http://irep.iium.edu.my/27128/ http://irep.iium.edu.my/27128/1/S0026271412003150 |