Trench DMOS interface trap characterization by three-terminal charge pumping measurement

The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal–Oxide–Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control moni...

Full description

Bibliographic Details
Main Authors: Izzudin , Ismah, Kamaruddin , Mohd. Hanif, Nordin, Anis Nurashikin, Soin, Norhayati
Format: Article
Language:English
Published: Elsevier 2012
Subjects:
Online Access:http://irep.iium.edu.my/27128/
http://irep.iium.edu.my/27128/
http://irep.iium.edu.my/27128/1/S0026271412003150