Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET
A major effect of different measurement delay in seconds is revealed through quasi DC Stress Measure Stress experiments. We found that different delay of measurements in seconds contributed to different stress time needed to achieve target 10% degradation of Vth. The longer delay, the more time...
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| Format: | Conference or Workshop Item |
| Language: | English English |
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IEEE
2017
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iium-628862018-06-26T03:55:23Z http://irep.iium.edu.my/62886/ Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET Hatta, Sharifah Wan M. Hussin, Hanim Yati Soon, F.Y. Abdul Wahab, Yasmin Abdul Hadi, Dayanasari Soin, Norhayati Alam, A. H.M.Zahirul Nordin, Anis Nurashikin T Technology (General) A major effect of different measurement delay in seconds is revealed through quasi DC Stress Measure Stress experiments. We found that different delay of measurements in seconds contributed to different stress time needed to achieve target 10% degradation of Vth. The longer delay, the more time needed for the device to achieve 10% degradation of Vth. The effect on NBTI degradation is shown to be reliant on stress conditions (stress voltage, temperature) and device architecture (gate dimensions, gate oxide thickness). The NBTI lifetime was predicted by extrapolating lifetime to the nominal operating voltage from Time-to-Fail versus stress bias and oxide electric field plots. Both plots show that the lifetime of degradation parameter of Vth is lower compared to the lifetime of degradation parameter of Idsat. IEEE 2017-10-19 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/62886/1/62886%20Negative%20Bias%20Temperature%20Instability%20Characterization.pdf application/pdf en http://irep.iium.edu.my/62886/2/62886%20Negative%20Bias%20Temperature%20Instability%20SCOPUS.pdf Hatta, Sharifah Wan M. and Hussin, Hanim Yati and Soon, F.Y. and Abdul Wahab, Yasmin and Abdul Hadi, Dayanasari and Soin, Norhayati and Alam, A. H.M.Zahirul and Nordin, Anis Nurashikin (2017) Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET. In: 2017 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE 2017), 24th-25th April 2017, Pulau Langkawi, Kedah. http://ieeexplore.ieee.org/document/8074978/ 10.1109/ISCAIE.2017.8074978 |
| repository_type |
Digital Repository |
| institution_category |
Local University |
| institution |
International Islamic University Malaysia |
| building |
IIUM Repository |
| collection |
Online Access |
| language |
English English |
| topic |
T Technology (General) |
| spellingShingle |
T Technology (General) Hatta, Sharifah Wan M. Hussin, Hanim Yati Soon, F.Y. Abdul Wahab, Yasmin Abdul Hadi, Dayanasari Soin, Norhayati Alam, A. H.M.Zahirul Nordin, Anis Nurashikin Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET |
| description |
A major effect of different measurement delay in
seconds is revealed through quasi DC Stress Measure Stress
experiments. We found that different delay of measurements in
seconds contributed to different stress time needed to achieve
target 10% degradation of Vth. The longer delay, the more time
needed for the device to achieve 10% degradation of Vth. The effect
on NBTI degradation is shown to be reliant on stress conditions
(stress voltage, temperature) and device architecture (gate
dimensions, gate oxide thickness). The NBTI lifetime was
predicted by extrapolating lifetime to the nominal operating
voltage from Time-to-Fail versus stress bias and oxide electric field
plots. Both plots show that the lifetime of degradation parameter
of Vth is lower compared to the lifetime of degradation parameter
of Idsat. |
| format |
Conference or Workshop Item |
| author |
Hatta, Sharifah Wan M. Hussin, Hanim Yati Soon, F.Y. Abdul Wahab, Yasmin Abdul Hadi, Dayanasari Soin, Norhayati Alam, A. H.M.Zahirul Nordin, Anis Nurashikin |
| author_facet |
Hatta, Sharifah Wan M. Hussin, Hanim Yati Soon, F.Y. Abdul Wahab, Yasmin Abdul Hadi, Dayanasari Soin, Norhayati Alam, A. H.M.Zahirul Nordin, Anis Nurashikin |
| author_sort |
Hatta, Sharifah Wan M. |
| title |
Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET |
| title_short |
Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET |
| title_full |
Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET |
| title_fullStr |
Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET |
| title_full_unstemmed |
Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET |
| title_sort |
negative bias temperature instability characterization and lifetime evaluations of submicron pmosfet |
| publisher |
IEEE |
| publishDate |
2017 |
| url |
http://irep.iium.edu.my/62886/ http://irep.iium.edu.my/62886/ http://irep.iium.edu.my/62886/ http://irep.iium.edu.my/62886/1/62886%20Negative%20Bias%20Temperature%20Instability%20Characterization.pdf http://irep.iium.edu.my/62886/2/62886%20Negative%20Bias%20Temperature%20Instability%20SCOPUS.pdf |
| first_indexed |
2023-09-18T21:29:06Z |
| last_indexed |
2023-09-18T21:29:06Z |
| _version_ |
1777412390898368512 |